Guru Santhi Electronics

The SKD502T is a high-performance N-channel power MOSFET designed for high-voltage and high-efficiency switching applications. This MOSFET is ideal for use in various power electronics applications due to its robust performance and low on-resistance.

Key Features:

• Maximum Drain-Source Voltage (Vds): 85V

• Maximum Gate-Source Voltage (Vgs): 20V

• Maximum Drain Current (Id): 120A

• Maximum Power Dissipation (Pd): 174W

• Gate Threshold Voltage (Vgs(th)): 4V

• On-State Resistance (Rds(on)): 5.5mΩ @ 10V, 50A

• Package: TO-220

• Applications: Suitable for motor drives, power supplies, inverters, and lighting systems.

Applications:

• Motor Drives: Efficiently controls the speed and torque of electric motors.

• Power Supplies: Used in switching power supplies for efficient power conversion.

• Inverters: Essential component in inverters for converting DC to AC power.

• Lighting Systems: Ideal for high-efficiency LED lighting systems.

Why Choose Guru Santhi Electronics?

• High-Quality Products: We ensure that all our MOSFETs meet stringent quality standards.

• Wide Range: Our extensive selection caters to various applications and requirements.

• Competitive Pricing: We offer our products at competitive prices without compromising on quality.

• Customer Support: Our dedicated team is always ready to assist you with your needs.

Explore our complete range of MOSFETs and find the perfect solution for your project with Guru Santhi Electronics.

Key feature:-

• N–channel enhancement mode power MOSFET

• Drain current capacity: up to 49A

• Drain-to-source voltage: 55V

• Very low on-resistance for high efficiency

• Fast switching speed suitable for high-frequency applications

• Low gate drive power requirement

• TO-220 package for easy mounting and heat dissipation

• High reliability and rugged design

The STP75NF75 is a high-performance N-channel power MOSFET designed by STMicroelectronics. This MOSFET is ideal for high-efficiency, high-frequency switching applications, making it suitable for various power electronics projects.


Key Features:Maximum Drain-Source Voltage (Vds):** 75V- **Maximum Gate-Source Voltage (Vgs):** ±20V- **Maximum Drain Current (Id):** 80A- **On-State Resistance (Rds(on)):** 0.0095Ω (typical)- **Power Dissipation (Pd):** 300W- **Package:** TO-220
**Specifications:**- **Technology:** STripFET™ II- **Gate Charge (Qg):** 117nC- **Operating Temperature Range:** -55°C to +175°C- **Rise Time:** 100ns- **Fall Time:** 30ns
**Applications:**- **DC-DC Converters:** Suitable for high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications.- **Switching Applications:** Ideal for applications with low gate drive requirements.- **Power Supplies:** Used in switching power supplies for efficient power conversion.
**Why Choose Guru Santhi Electronics?**- **High-Quality Products:** We ensure that all our products meet the highest standards of quality and reliability.- **Competitive Pricing:** Our products are priced competitively to provide the best value for your money.- **Excellent Customer Service:** We are committed to providing exceptional customer service and support.
Enhance your projects with the STP75NF75 MOSFET from Guru Santhi Electronics. Order now and experience the precision and reliability of our high-quality products.

The STP55NF06 is an N-channel power MOSFET with a maximum drain-source voltage of 60V, a maximum continuous drain current of 50A, and a maximum on-resistance of 0.015Ω ¹². It is designed using STMicroelectronics’ unique STripFET process, which minimizes input capacitance and gate charge, making it suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements ¹².

Here are some of the technical specifications of the STP55NF06: