Guru Santhi Electronics

We are offering Electrical Power Transistor.

Electrical Power Transistor is a semiconductor device designed to switch or amplify electrical signals at high current and voltage levels. Unlike small-signal transistors, power transistors are built to handle significant power dissipation, making them suitable for applications such as power supplies, motor control, inverters, and audio amplification. They offer fast switching, high efficiency, and durability, with common types including BJTs (Bipolar Junction Transistors), MOSFETs, and IGBTs, each optimized for different voltage, current, and frequency ranges.

Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 s) VGS ±30 V Continuous Drain Current (RJC) Steady State TC = 25°C ID 20 A TC = 100°C 13 Power Dissipation (RJC) TC = 25°C PD 36 W Pulsed Drain Current tp = 10 s IDM 76 A Operating Junction and Storage Temperature TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS 20 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 , IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C) EAS 18 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affec